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Future Electronics Has Immediate Stock of ROHM’s SiC MOSFETs with Industry First Integrated SiC SBD
Future Electronics Has Immediate Stock of ROHM’s SiC MOSFETs with Industry First Integrated SiC SBD
Future Electronics announces immediate availability of 2nd generation high voltage (1200V) Silicon Carbide (SiC) power MOSFETs from ROHM, significantly reducing power loss and requiring fewer external components.
Pointe Claire,
Quebec,
Canada
(prbd.net)
24/07/2013
Future Electronics, a global leading distributor of electronic components, announces immediate availability of 2nd generation high voltage (1200V) Silicon Carbide (SiC) power MOSFETs from ROHM, significantly reducing power loss and requiring fewer external components.
Silicon Carbide (SiC) power MOSFETs are designed for inverters and converters in power conditioners for industrial devices and photovoltaic power generation. Features include low power loss and high reliability, reducing power consumption and enabling support for smaller peripheral components.
Current Si IGBTs commonly used in 1200V class inverters and converters cause power switching loss due to tail current or recovery of the external
FRD, bringing a need for SiC power MOSFETs capable of operating with low switching loss at high frequencies. However, conventional SiC power MOSFETs were plagued with numerous reliability problems, including characteristic degradation due to body diode conduction (e.g. increased ON resistance, forward voltage, and resistance degradation) and failures of the gate oxide film, making full scale integration impossible.
ROHM has succeeded in overcoming these problems by improving processes related to crystal defects and device structure and reducing ON resistance per unit area by approximately 30% compared to conventional products, leading to increased miniaturization. ROHM has also successfully integrated an SiC SBD, which previously had to be externally mounted, in the same package using proprietary mounting technology, minimizing forward voltage that was problematic in previous SiC power MOSFET body diodes. As a result, the SCH2080KE reduces operating power loss by 70% or more compared to Si IGBTs used in general inverters. This not only provides lower switching loss, but also enables compatibility with smaller peripheral components by supporting frequencies above 50kHz. ROHM also offers the SCT2080KE, an SiC power MOSFET with no internal SiC SBD.
Additional models, including bare dies, are currently under development.
To purchase product(s) or for more information, along with access to the world's largest available-to-sell inventory, visit FutureElectronics.com.
About Future Electronics
Future Electronics is a world class leader and innovator in the distribution and marketing of electronic components. Having served the electronics industry for over 40 years, Future Electronics is uniquely positioned as the only truly global distributor of electronic components supporting customers of all sizes. Future Electronics currently operates in 169 locations in 42 countries in the Americas, Europe and Asia, with its corporate headquarters in Montreal, Canada. FutureElectronics.com
Media Contact
Martin H. Gordon
Director, Corporate Communications
FUTURE ELECTRONICS
www.FutureElectronics.com
514-694-7710 (ext. 2236)
Fax: 514-630-2671
martin.gordon@FutureElectronics.com
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About
Future Electronics is a world class leader and innovator in the distribution and marketing of electronic components.
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